N H Alvi

Summary

Publications

  1. pmc Influence of helium-ion bombardment on the optical properties of ZnO nanorods/p-GaN light-emitting diodes
    Naveed Ul Hassan Alvi
    Department of Science and Technology ITN, Campus Norrköping, Linkoping University, 60174 Norrköping, Sweden
    Nanoscale Res Lett 6:628. 2011
  2. pmc The origin of the red emission in n-ZnO nanotubes/p-GaN white light emitting diodes
    N H Alvi
    Department of Science and Technology ITN Campus Norrköping, Linkoping University, 60174 Norrköping, Sweden
    Nanoscale Res Lett 6:130. 2011
  3. pmc Single nanowire-based UV photodetectors for fast switching
    Kamran Ul Hasan
    Department of Science and Technology ITN Linköping University, Campus Norrköping, SE 601 74 Norrköping, Sweden
    Nanoscale Res Lett 6:348. 2011

Collaborators

  • Kamran Ul Hasan
  • Jun Lu
  • O Nur
  • Magnus Willander

Detail Information

Publications3

  1. pmc Influence of helium-ion bombardment on the optical properties of ZnO nanorods/p-GaN light-emitting diodes
    Naveed Ul Hassan Alvi
    Department of Science and Technology ITN, Campus Norrköping, Linkoping University, 60174 Norrköping, Sweden
    Nanoscale Res Lett 6:628. 2011
    ..The color-rendering properties show a small decrease in the color-rendering indices of 3% after 2 MeV He+ ions irradiation...
  2. pmc The origin of the red emission in n-ZnO nanotubes/p-GaN white light emitting diodes
    N H Alvi
    Department of Science and Technology ITN Campus Norrköping, Linkoping University, 60174 Norrköping, Sweden
    Nanoscale Res Lett 6:130. 2011
    ..79 eV) to 750 nm (1.65 eV). The annealing ambients, especially the nitrogen ambient, were also found to greatly influence the color-rendering properties and increase the CRI of the as - grown LEDs from 87 to 96...
  3. pmc Single nanowire-based UV photodetectors for fast switching
    Kamran Ul Hasan
    Department of Science and Technology ITN Linköping University, Campus Norrköping, SE 601 74 Norrköping, Sweden
    Nanoscale Res Lett 6:348. 2011
    ..The photodetector shows high stability, reversibility, and sensitivity to UV light. The results imply that single ZnO NW Schottky diode is a promising candidate for fabricating UV photodetectors...