Max G Lagally

Summary

Affiliation: University of Wisconsin
Country: USA

Publications

  1. ncbi Translation and manipulation of silicon nanomembranes using holographic optical tweezers
    Stefan M Oehrlein
    University of Wisconsin, Madison, WI 53706, USA
    Nanoscale Res Lett 6:507. 2011
  2. ncbi Fabrication of ultrahigh-density nanowires by electrochemical nanolithography
    Feng Chen
    University of Wisconsin Madison, Madison, WI 53706, USA
    Nanoscale Res Lett 6:444. 2011
  3. ncbi Influence of surface properties on the electrical conductivity of silicon nanomembranes
    Xiangfu Zhao
    University of Wisconsin Madison, Madison WI 53706, USA
    Nanoscale Res Lett 6:402. 2011
  4. ncbi Influence of surface chemical modification on charge transport properties in ultrathin silicon membranes
    Shelley A Scott
    University of Wisconsin Madison, Madison, Wisconsin 53706
    ACS Nano 3:1683-92. 2009
  5. ncbi Direct-bandgap light-emitting germanium in tensilely strained nanomembranes
    Jose R Sanchez-Perez
    Department of Materials Science and Engineering, University of Wisconsin, Madison, WI 53706
    Proc Natl Acad Sci U S A 108:18893-8. 2011
  6. ncbi Symmetry in strain engineering of nanomembranes: making new strained materials
    Deborah M Paskiewicz
    University of Wisconsin, Madison, Wisconsin 53706, USA
    ACS Nano 5:5532-42. 2011
  7. ncbi "Soft Si": effective stiffness of supported crystalline nanomembranes
    Francesca Cavallo
    University of Wisconsin Madison, Madison, Wisconsin 53706, USA
    ACS Nano 5:5400-7. 2011
  8. ncbi Semiconductor nanomembrane tubes: three-dimensional confinement for controlled neurite outgrowth
    Minrui Yu
    Department of Electrical and Computer Engineering, University of Wisconsin Madison, Madison, Wisconsin 53706, USA
    ACS Nano 5:2447-57. 2011
  9. ncbi Nanomechanical architecture of semiconductor nanomembranes
    Minghuang Huang
    University of Wisconsin Madison, Madison, WI 53706, USA
    Nanoscale 3:96-120. 2011
  10. ncbi Quantum confinement, surface roughness, and the conduction band structure of ultrathin silicon membranes
    Feng Chen
    University of Wisconsin Madison, Madison, Wisconsin 53706, USA
    ACS Nano 4:2466-74. 2010

Collaborators

  • Minghuang Huang
  • Francesca Cavallo
  • Feng Liu
  • Yu Zhang
  • Minrui Yu
  • Deborah M Paskiewicz
  • Feng Chen
  • Arnold M Kiefer
  • Donald E Savage
  • Shelley A Scott
  • Hongquan Jiang
  • Jose R Sanchez-Perez
  • Rb Jacobson
  • Xiangfu Zhao
  • Anna M Clausen
  • Frank S Flack
  • Stefan M Oehrlein
  • Bingjun Ding
  • George K Celler
  • Weina Peng
  • Irena Knezevic
  • Walter R Buchwald
  • Ryan J Kershner
  • Amy E Wendt
  • Faisal F Sudradjat
  • Cicek Boztug
  • Roberto Paiella
  • Boy Tanto
  • Yuk Hong Ting
  • Richard A Soref
  • Franz J Himpsel
  • Chanan Euaruksakul
  • Edwin B Ramayya
  • Ferencz S Denes
  • Mark A Eriksson

Detail Information

Publications14

  1. ncbi Translation and manipulation of silicon nanomembranes using holographic optical tweezers
    Stefan M Oehrlein
    University of Wisconsin, Madison, WI 53706, USA
    Nanoscale Res Lett 6:507. 2011
    ..Using as few as one trap and trapping powers as low as several hundred milliwatts, silicon nanomembranes can be rotated and translated in a solution over large distances...
  2. ncbi Fabrication of ultrahigh-density nanowires by electrochemical nanolithography
    Feng Chen
    University of Wisconsin Madison, Madison, WI 53706, USA
    Nanoscale Res Lett 6:444. 2011
    ..We demonstrate this method on Si/SiGe multilayer superlattices using electrochemical nanopatterning and plasma etching to obtain high-density Si/SiGe multilayer superlattice nanowires...
  3. ncbi Influence of surface properties on the electrical conductivity of silicon nanomembranes
    Xiangfu Zhao
    University of Wisconsin Madison, Madison WI 53706, USA
    Nanoscale Res Lett 6:402. 2011
    ..X-ray photoelectron spectroscopy measurements are consistent with the electrical-conductivity results. We pinpoint the likely cause of the differences.PACS: 73.63.-b, 62.23.Kn, 73.40.Ty...
  4. ncbi Influence of surface chemical modification on charge transport properties in ultrathin silicon membranes
    Shelley A Scott
    University of Wisconsin Madison, Madison, Wisconsin 53706
    ACS Nano 3:1683-92. 2009
    ..We explain this behavior in terms of surface-induced band structure changes combined with the effective isolation from bulk properties created by crystal thinness...
  5. ncbi Direct-bandgap light-emitting germanium in tensilely strained nanomembranes
    Jose R Sanchez-Perez
    Department of Materials Science and Engineering, University of Wisconsin, Madison, WI 53706
    Proc Natl Acad Sci U S A 108:18893-8. 2011
    ....
  6. ncbi Symmetry in strain engineering of nanomembranes: making new strained materials
    Deborah M Paskiewicz
    University of Wisconsin, Madison, Wisconsin 53706, USA
    ACS Nano 5:5532-42. 2011
    ..We are thus able to make uniformly strained materials that cannot be made any other way...
  7. ncbi "Soft Si": effective stiffness of supported crystalline nanomembranes
    Francesca Cavallo
    University of Wisconsin Madison, Madison, Wisconsin 53706, USA
    ACS Nano 5:5400-7. 2011
    ....
  8. ncbi Semiconductor nanomembrane tubes: three-dimensional confinement for controlled neurite outgrowth
    Minrui Yu
    Department of Electrical and Computer Engineering, University of Wisconsin Madison, Madison, Wisconsin 53706, USA
    ACS Nano 5:2447-57. 2011
    ....
  9. ncbi Nanomechanical architecture of semiconductor nanomembranes
    Minghuang Huang
    University of Wisconsin Madison, Madison, WI 53706, USA
    Nanoscale 3:96-120. 2011
    ..We also describe several materials properties of nanomechanical architectures. We discuss potential applications of nanomembrane technology to implement simple and hybrid functionalities...
  10. ncbi Quantum confinement, surface roughness, and the conduction band structure of ultrathin silicon membranes
    Feng Chen
    University of Wisconsin Madison, Madison, Wisconsin 53706, USA
    ACS Nano 4:2466-74. 2010
    ..The measured dependence of the sub-band splitting and the shift of their weighted average on degree of confinement is in excellent agreement with theory, for both Si(001) and Si(110)...
  11. ncbi Defect-free single-crystal SiGe: a new material from nanomembrane strain engineering
    Deborah M Paskiewicz
    University of Wisconsin, Madison, Wisconsin 53706, USA
    ACS Nano 5:5814-22. 2011
    ..We confirm the high structural quality of these new materials and demonstrate their use as substrates for technologically relevant epitaxial films by growing strained-Si layers and thick, lattice-matched SiGe alloy layers on them...
  12. ncbi Si/Ge junctions formed by nanomembrane bonding
    Arnold M Kiefer
    University of Wisconsin Madison, Madison, Wisconsin 53706, United States
    ACS Nano 5:1179-89. 2011
    ..Both the Si and the Ge maintain a high degree of crystallinity. The junction is highly conductive. The nonlinear transport behavior is fit with a tunneling model, and the bonding behavior is explained with nanomembrane mechanics...
  13. ncbi New strategy for synthesis and functionalization of carbon nanoparticles
    Hongquan Jiang
    Department of Material Science and Engineering, University of Wisconsin Madison, Madison, Wisconsin 53706, USA
    Langmuir 26:1991-5. 2010
    ..XPS, TG/DTG, FTIR, and fluorescence tests confirm the viability of this new amination process. The nanoparticles are small and relatively uniformly sized. Their dispersibility in aqueous solution is significant...
  14. ncbi Mechano-electronic superlattices in silicon nanoribbons
    Minghuang Huang
    Department of Materials Science and Engineering, University of Wisconsin, Madison, Wisconsin 53706, USA
    ACS Nano 3:721-7. 2009
    ..We predict that it is possible to observe discrete minibands in Si nanoribbons at room temperature if nanostressors of a different material are grown...